法国专利FR3026877A1 SENSOR OF DIGITAL OR PALMAIRE IMPRESSIONS

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专利摘要:
A fingerprint sensor (160) having, on a transparent support substrate, a plurality of elementary acquisition cells (161), each cell having a photodetector (PS), a pyroelectric conversion element (PYR) , and at least one TFT transistor (RT, SF) connected to both the photodetector (PS) and the pyroelectric conversion element (PYR).
公开号:FR3026877A1
申请号:FR1459494
申请日:2014-10-03
公开日:2016-04-08
发明作者:Jean-Francois Mainguet；Joel Yann Fourre；Puchades Josep Segura
申请人:Commissariat a lEnergie Atomique CEA；Safran SA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
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[0001] BACKGROUND OF THE INVENTION The present application relates to the field of fingerprint or palmar sensors. DISCUSSION OF THE PRIOR ART Various types of sensors have been proposed to carry out an electronic acquisition of a fingerprint and / or palmar, that is to say to provide an image of the pattern formed by the ridges and hollows of the skin. a finger, several fingers, and / or the palm of the hand. In particular, optical sensors, capacitive sensors, thermal sensors, ultrasonic sensors, and electric field sensors have been proposed. Of particular interest here are fingerprint sensors made in TFT (Thin Film Transistor) technology, that is to say comprising, on a support substrate, one or several elementary acquisition cells, each elementary cell (or pixel) comprising an acquisition element, for example photoelectric, pyroelectric or capacitive, and one or more TFT transistors for controlling this element. By transistor TFT is meant here transistors formed by successive deposition of conductive, insulating and semiconductive layers on the support substrate. In particular, in a TFT transistor, the semiconductor transistor forming region B13696-DD15734SP 2 is produced by depositing a layer of a semiconductor material, for example hydrogenated amorphous silicon, polycrystalline silicon (polycrystalline rendering after a annealing for example), or a material type IGZO (of the English "Indium Gallium Zinc Oxide" - indium gallium zinc oxide), this deposit may be preceded by a deposit of a conductive layer used to form a gate, source or drain electrode of the transistor. The impression sensors made in TFT technology have the advantage of being relatively inexpensive, in particular by virtue of the use of a support substrate made of a low-cost material such as glass (instead of a substrate made of monocrystalline silicon generally used to make transistors), and to be easily integrated in many types of electronic devices, and in particular in devices already using TFT technology to perform other functions, for example to make screens of display. TFT technology is particularly advantageous in the field of fingerprint sensors in which the surface of the sensor is substantially identical to the surface of the impression to be acquired, that is to say in which no optical focusing system (or objective) is placed between the sensor and the object whose image is to be acquired. Indeed, because of their large sizes, the realization of such sensors in and on silicon substrates would be a cost far too high for most applications. SUMMARY An embodiment provides a fingerprint sensor having, on a transparent support substrate, a plurality of elementary acquisition cells, each cell having a photodetector, a pyroelectric conversion element, and at least one TFT transistor connected to the to the photodetector and the pyroelectric conversion element. According to one embodiment, the sensor further comprises a light source of illumination, and a heat source 35 distinct from the light source.
[0002] According to one embodiment, the photodetector and the pyroelectric conversion element are connected in parallel. According to one embodiment, the sensor comprises a circuit adapted to control the acquisition of a thermal image and the acquisition of an optical image by the sensor cells, this circuit being adapted, throughout the acquisition phase. of the optical image, to turn on the light source and keep the heat source off, and, throughout the heat image acquisition phase, to keep the light source off. According to one embodiment, the sensor comprises a circuit adapted to control the acquisition of a thermal image and the acquisition of an optical image by the cells of the sensor, this circuit being adapted to implement the acquisition of the thermal image during part of an integration period of the acquisition phase of the optical image during which the light source is lit. According to one embodiment, in each cell, the photodetector and the pyroelectric conversion element are connected to a capacitive read node of the cell. According to one embodiment, in each cell, the photodetector and the pyroelectric conversion element are connected to an intermediate node of the cell, the intermediate node being connected to a capacitive read node of the cell by a selection transistor, and each cell further comprising: a reference capacitor connected between the read capacitive node and an application node of a control signal; and an electrode connected to the capacitive readout node 30, the EL electrode being coated with a dielectric layer and being adapted to form a capacitance with the skin of a user for capacitive acquisition of a fingerprint image . According to one embodiment, the photodetector and the pyroelectric conversion element are connected to a same selection transistor allowing, in the open state, to isolate the photodetector from the pyroelectric element. In one embodiment, the cells are arrayed in rows and columns, and the heat source is controllable to heat the cells line by line. According to one embodiment, the cells are voltage-read cells, each cell comprising: a capacitive readout node to which the photodetector 10 and the pyroelectric conversion element are connected; a reset transistor connecting the read capacitive node to an application node of a reset potential; and a read circuit comprising a follower source-mounted transistor, whose gate is connected to the read node, and whose source is connected to an output track of the cell via a read transistor. According to one embodiment, the cells are load-reading cells, each cell comprising: a capacitive readout node to which the photodetector and the pyroelectric conversion element are connected; and a read transistor connecting the read node to an output track of the cell. BRIEF DESCRIPTION OF THE DRAWINGS These features and their advantages, as well as others, will be set forth in detail in the following description of particular embodiments in a non-limiting manner with reference to the accompanying figures, in which: the figure of a sensor Figure 3 of a sensor Figure 1 of a sensor Figure 1 of a sensor 1 is an electrical diagram illustrating an optical TFT fingerprint; 2 is an electrical diagram illustrating a thermal TFT prints; is an electrical diagram illustrating another of optical or thermal TFT prints; 4 is an electrical diagram illustrating a capacitive TFT fingerprint; Example 30 Example Example 35 Example B13696 - DD15734SP Figure 5 is an electrical diagram illustrating another exemplary embodiment of a TFT fingerprint sensor; Fig. 6 is an electrical diagram illustrating a first embodiment of a TFT fingerprint sensor; Figure 7 is an electrical diagram illustrating an alternative embodiment of the sensor of Figure 6; Figure 8 is an electrical diagram illustrating another alternative embodiment of the sensor of Figure 6; Fig. 9 is an electrical diagram illustrating a second embodiment of a TFT fingerprint sensor; and FIG. 10 is an electrical diagram illustrating an alternative embodiment of the sensor of FIG. 9. Detailed Description For the sake of clarity, the same elements have been designated with the same references in the various figures. In addition, only the elements useful for understanding the described embodiments have been detailed. In particular, the peripheral circuits for controlling the elementary cells of the TFT impression sensors described have not been detailed, the production of such circuits being within the abilities of those skilled in the art on reading the present description. . Note further that in the present description, when architectures of elementary cells, elementary cell arrays or fingerprint sensors are described, the term "connected" is used to denote a direct electrical connection without intermediate electronic components. , for example by means of a conductive track, and the term "coupled" or the term "connected", to designate a direct electrical connection or via one or more intermediate components, for example via a transistor. FIG. 1 is an electrical diagram illustrating an example of an optical TFT fingerprint sensor 100. The sensor 100 comprises a plurality of identical or similar elementary acquisition cells 101, made of TFT technology on one side of a substrate. of transparent support, for example glass, which will be hereinafter conventionally referred to as the upper face of the substrate. For the sake of simplification, a single cell 101 has been shown in FIG. 1. Each cell 101 comprises a photodetector PS, for example a photodiode whose anode is connected to an application node of a reference potential GND (by example the mass), and whose cathode is connected to a capacitive read node SN of the cell. By way of example, the photodetector PS is a PIN type photodiode, or an organic photodiode. In FIG. 1, the capacity of the read node SN has been represented in dotted lines in the form of a capacitor whose one electrode is connected to the node SN and whose other electrode is connected to the node GND. In practice, the capacity of the node SN may be a parasitic capacitance of another element of the cell, for example the parasitic capacitance of the photodiode PS (to which is added the parasitic capacitance of the transistor RS in the example represented), or a specific ability. For the sake of simplicity, the capacity of the SN node will not be represented in the following figures. Each cell 101 further comprises a read transistor RS connecting its read node SN to a conductive output track CL of the cell. The control gate of the transistor RS is connected to a node VGRs of application of a control potential of this transistor. The output track CL of the cell 101 is connected to an output stage 103 of the sensor. In this example, the output stage 103 comprises an operational amplifier 105 including an inverting input (-) connected to the track CL and a non-inverting input (+) connected to a node Vp01 for applying a bias potential . The output stage 103 further comprises an analog-to-digital converter 107 (ADC) whose input is connected to the output of the amplifier 105. In the example shown, the output stage further comprises a capacitor 109. in parallel with a control switch 111 between the inverting input (-) and the output of the amplifier 105. The sensor 100 further comprises a lighting light source, not shown. By way of example, the light source 35 is arranged on the side of the face of the opposite substrate B13696 - DD15734SP 7 to the cells 101, which will be hereafter referred to as the lower face of the substrate. The operation of the sensor 100 is as follows. The user places one finger (or more) on or above the top surface of the sensor (cell side 101). The backlight light source, disposed on the side of the substrate opposite the cells, illuminates the finger through transparent areas of the assembly formed by the support substrate and the cells 101. The light is then backscattered by the finger towards the photodiodes PS, with, at each cell 101, a more or less attenuation depending on whether the finger portion above the cell corresponds to a peak or a hollow of the skin of the finger. Alternatively, the light source can be placed above or next to the finger, the light then being transmitted by the finger towards the PS photodiodes of the sensor, with a greater or lesser attenuation depending on the portion of finger located above the cell corresponds to a ridge or hollow of the skin of the finger. During a period of integration of a cell 101, the read transistor RS of the cell is off, and the light reflected by the finger is converted into electrical charges by the photodiode PS of the cell. These charges are stored on the read node SN of the cell. At the end of the integration period, the photogenerated charges are transferred to the output track CL of the cell (which may have been previously reset by closing the switch 111) via the transistor RS, and the signal resulting is read by the output stage 103 connected to the track CL. Since the transistor RS is bidirectional, it also resets the photodiode PS to a fixed potential before the start of a new integration period. By way of example, several elementary cells 101 may be connected to the same output track CL and share a same output stage 103 of the sensor. The cells 101 are for example arranged in a matrix according to rows and columns, the cells of one and the same column being connected to the same output track B13696-DD15734SP 8 and to the same output stage 103, and the columns cells separate lines being connected to separate CL output tracks and separate output stages 103. For example, the cells 101 are controllable simultaneously line by line, that is to say that the cells 101 of the same line have their nodes VGRs connected to the same control track and the cells 101 of distinct lines have their VGR nodes connected to separate control tracks. FIG. 2 is an electrical diagram illustrating an example of a thermal TFT fingerprint sensor 120. The sensor 120 of FIG. 2 comprises elements common to the sensor 100 of FIG. 1. These elements will not be described again. The sensor 120 differs from the sensor 100 mainly in that, in the sensor 120, elementary acquisition cells 121 of the thermal type replace the elementary optical acquisition cells 101 of the sensor 100. The elementary cells 121 of the sensor of FIG. differ from the elementary cells 101 of the sensor of FIG. 1 in that, in each cell 121, a pyroelectric conversion element PYR, connecting the reading node SN of the cell to the node GND, replaces the photodetector PS of the cells 101. Pyroelectric conversion element PYR typically comprises a layer of a pyroelectric material such as aluminum nitride (A.1N), zinc oxide (ZnO), a polymer such as polyvinylidene fluoride (PVDF), the pyroelectric coefficient is of the order of 40 pC / m2 / K, a ceramic material of the PZT (lead titanozirconate) type, whose pyroelectric coefficient is of the order of 350 pC / m2 / K, or a crystalline material TGS (Triglycine sulfate) or LiTaO3 type allin arranged between two conductive layers respectively connected to the SN node and to the GND node. The sensor 120 further differs from the sensor 100 of Fig. 1 in that it does not include a backlight light source, but includes a heat source, not shown. By way of example, the heat source may comprise a network of resistors regularly distributed over the surface of the sensor. For example, the heat source comprises a resistance elementary cell this resistance being disposed in the vicinity of the pyroelectric element of the cell. The resistors of the heat source are preferably arranged on the same side of the support substrate as the cells 101, that is to say on the side of the upper face of the substrate. The operation of the sensor 120 is as follows. The user has placed one finger (or more) on or above the top surface of the sensor (cell side 121). The heat source of the sensor is then turned on, and heats the pyroelectric conversion elements PYR which consequently generate electrical charges on the reading nodes SN of the corresponding cells 121. The amount of heat received by each pyroelectric conversion element PYR when the heat source is turned on is greater when the corresponding cell is surmounted by a hollow of the skin, than when it is surmounted by a ridge. Indeed, when the cell is surmounted by a ridge, the skin absorbs a larger part of the heat emitted by the source than when the cell is surmounted by a hollow. Thus, when a cell 121 is surmounted by a hollow of the skin, the amount of electric charges generated on its reading node SN is greater than when the cell is surmounted by a peak. At the end of an integration period during which the read transistor RS of the cell is kept off, the charges accumulated on the node SN are transferred to the output track CL of the cell via the transistor RS , and the resulting signal is read by the output stage 103 connected to the track CL. Since the RS transistor is bidirectional, it also resets the SN node before the start of a new integration period. Preferably, during an acquisition, the heat source is controlled to produce a heat pulse, and the cells are read a certain time after the start of the pulse, and / or shortly thereafter. the end of this pulse, so as to overcome the phenomena of thermalization causing, over time, the standardization of accumulated charge levels on the reading nodes SN of the different cells.
[0003] As in the example of FIG. 1, a plurality of elementary cells 121 can be connected to the same output track CL and share a same output stage 103 of the sensor. The cells 121 are, for example, arranged in a matrix according to rows and columns, the cells of one and the same column being connected to the same output track CL and to the same output stage 103, and the cells of distinct columns being connected to separate output tracks CL and separate output stages 103. For example, the cells 121 are controllable simultaneously line by line. Preferably, the heat source is then controllable to heat cells 121 line by line. This makes it possible to scan the sensor line by line by synchronizing the ignition of the heat source with the reading of the cells, and thus to minimize the effects of the thermalization on the acquired image. In this case, the heat source may consist of conductive tracks extending along the lines of the sensor, for example metal tracks (for example in molybdenum or aluminum), tracks in a metal oxide, possibly transparent (eg indium tin oxide), polycrystalline silicon tracks, or conductive polymer tracks. In the sensors 100 and 120 of FIGS. 1 and 2, the elementary acquisition cells 101 and 121 are load-reading cells, that is to say that the reading of a cell passes through the transfer, on the CL output track of the cell (via the RS read transistor of the cell), charges accumulated on the read node SN of the cell. An advantage of the load-reading acquisition cells is that they are particularly simple and / or compact (only one transistor per cell in the examples of FIGS. 1 and 2). Such cells are particularly suitable for TFT technologies, for example B13696-DD15734SP 11 based on amorphous silicon or indium gallium zinc oxide, in which the transistors are relatively bulky. By way of illustrative and non-limiting example, in the impression sensors of the type described in the present application, the pitch of the pixels can typically be of the order of 20 to 50 pin, which limits the number of transistors that can include each cell. FIG. 3 is an electric diagram illustrating another example of an optical or thermal TFT fingerprint sensor 130. The sensor 130 of FIG. 3 comprises elements common to the sensors 100 and 120 of FIGS. 1 and 2. will not be described again. The sensor 130 of FIG. 3 differs from the sensors 100 or 120 of FIGS. 1 and 2 essentially in that, in the sensor 130, elementary acquisition cells 131 with a voltage reading replace the load-reading cells 101 or 121 of the sensors 100 or 120. The sensor 130 further differs from the sensors 100 and 120 in that, in the sensor 130, one or more output stages 133 replace the output stage (s) 103 of the sensors 100 or 120. In the sensor 130 each elementary acquisition cell 131 comprises a photoelectric or pyroelectric conversion element 132 connected between a capacitive read node SN of the cell and an application node of a reference potential GND of the cell. By way of example, the conversion element 132 is an optical conversion element PS of the type described with reference to FIG. 1 or a thermal conversion element PYR of the type described with reference to FIG. in addition to a reset transistor RI connecting its read node SN to an application node of a reset potential VRT, for example a positive potential with respect to the potential of the node GND. Each cell 131 further comprises a follower source transistor SF, the gate of which is connected to the node SN, and a read transistor RD connecting the source of the transistor SF to the output track CL of the cell. The drain of the transistor SF is connected to an application node of a reference potential, for example the potential VRT or another potential. The gate of the transistor RI is connected to a VGRT node for the application of a control potential of this transistor, and the gate of the transistor RD is connected to an application VGRD node of a potential of FIG. control of this transistor.
[0004] The output track CL of the cell 131 is connected to an output stage 133 of the sensor. In this example, the output stage 133 comprises an amplifier 135 whose input is connected to the track CL and whose output is connected to an analog-to-digital converter 107 (ADC). The amplifier 135 is optional, and may in particular be omitted if the potential level of the track CL is compatible with the input of the analog-digital converter 107. The sensor 130 further comprises a lighting light source (not shown) if the elements 132 are optical acquisition elements, or a heat source (not shown) if the elements 132 are pyroelectric acquisition elements. The operation of an elementary cell 131 of the sensor 130 during a fingerprint acquisition phase will now be described. The conversion element 132 of the cell is first reset via the transistor RI of the cell. The transistor R1 is then turned off, and during an integration period, photogenerated charges or charges generated by the pyroelectric effect accumulate on the read node SN of the cell. At the end of the integration, the potential of the reading node SN is transferred to the output track CL of the cell via the transistors SF and RD. For this, the transistor RD of the cell is turned on. The potential of the output track CL is then read by the output stage 133 associated with the output track CL. An advantage of the voltage read acquisition cells is that they provide a better signal-to-noise ratio than the load-reading cells of the type described in connection with FIGS. 1 and 2.
[0005] FIG. 4 is an electrical diagram illustrating an example of a capacitive TFT fingerprint sensor 140. In the example shown, the sensor 140 is a voltage reading sensor. The sensor 140 comprises elements common to the sensor 130 of FIG. 3. These elements will not be described again below. The sensor 140 differs from the sensor 130 of FIG. 3 essentially in that, in the sensor 140, capacitive elementary acquisition cells 141 replace the optical or thermal acquisition cells 131 of the sensor 130. In this example, the sensor 140 does not include a lighting light source or heat source. Each cell 141 comprises the same elements as a cell 131 of the sensor of FIG. 3, with the exception of the optical or pyroelectric conversion element 132. Each cell 141 furthermore comprises a reference capacitor CREF, connected between the node SN reading of the cell and a CMD application node of a control signal. Each cell 141 further comprises a conductive electrode EL connected to the node SN, the electrode EL being coated with a dielectric layer and being intended to form a capacitance with the skin of a finger of the user. The electrode EL is preferably placed in the vicinity of the upper surface of the sensor, so that the dielectric thickness between the upper surface of the sensor (intended to receive the finger of the user) and the electrode EL does not exceed a few microns, for example The operation of the sensor 140 is as follows. The user places a finger (or more) on or above the top surface of the sensor (EL electrode side). When acquiring an image point of the cavity by a cell 141, the read node SN of the cell is first reset via the transistor RI of the cell. The transistor RI is then turned off, and then a control signal, for example a square-wave or step voltage, is applied to the control node CMD of the cell. The reference capacitance CREF and the capacitance formed between the electrode EL and the skin of the finger B13696 - DD15734SP 14 form a capacitive divider bridge. A potential depending on the capacitance formed between the electrode EL and the skin is then established on the reading node SN of the cell. The value of this potential is different depending on whether the EL electrode is surmounted by a peak or a hollow of the user's skin. The potential of the node SN is transferred to the output track CL of the cell via the transistors SF and RD. For this, the transistor RD of the cell is turned on. The potential of the output track CL is then read by the output stage 133 associated with the output track CL. The step applied on the CMD node can then be reduced to its initial value. According to one aspect of embodiments described, there is provided a fingerprint sensor made in TFT technology, this sensor comprising, on a transparent insulating support substrate 15, for example glass, a plurality of elementary acquisition cells, each cell. comprising a photodetector, a pyroelectric conversion element, and at least one TFT transistor. In other words, it is planned to combine, in each elementary cell, an optical acquisition element and a thermal acquisition element, so that the sensor provides, during the acquisition of a fingerprint or palmar, an optical image and a thermal image of the impression. An advantage of such a sensor is that the two images are acquired by means of acquisition elements based on phenomena having, a priori, no physical relationship. Indeed, the photodetector generates electric charges when it receives photons, and the pyroelectric element generates electric charges when its temperature varies. This makes it possible to solve, to a certain extent, the difficulties encountered in acquiring so-called "difficult" fingerprints, that is to say certain types of fingers on which the usual sensors fail to discriminate. satisfactorily the ridges of the hollows of the skin. The inventors have indeed found that, generally, an imprint difficult to acquire in the optical field B13696 - DD15734SP is easier to acquire in the thermal field, and, conversely, a footprint difficult to acquire in the thermal field is easier to acquire in the optical field. The fact of integrating the photodetector and the pyroelectric conversion element in the same elementary cell makes it possible to share TFT transistors for controlling the cell between the photodetector and the pyroelectric conversion element, and thus to limit the bulk, the complexity and cost of the sensor. Preferably, as will be detailed hereinafter with reference to FIGS. 6, 7, 8, 9 and 10, in each elementary cell, a same TFT transistor of the cell is connected to both the photodetector and the pyroelectric conversion, which limits the size. More particularly, in the embodiments of FIGS. 6, 7 and 8, in each elementary cell, the photoelectric and pyroelectric conversion elements are connected in parallel, which makes it possible to obtain elementary cells that are particularly simple and compact. Fig. 5 is an example of an optical and thermal TFT fingerprint sensor 150. The sensor 150 of Fig. 5 is a voltage reading sensor. The sensor 150 of Figure 5 comprises elements common with the sensor 130 of Figure 3. These elements will not be described again. The sensor 150 of FIG. 5 differs from the sensor 130 of FIG. 3 essentially in that, in the sensor 150, elementary acquisition cells 151, both optical and thermal, replace the optical or thermal cells 131 of the sensor 130 In the sensor 150, each elementary acquisition cell 151 comprises the same elements as an elementary acquisition cell 131 of the sensor 130, with the exception of the conversion element 132. Each cell 151 further comprises a photodetector PS, for example of the type described in relation to FIG. 1, in series with a selection transistor SW1 between the capacitive read node SN of the cell and the reference node GND of the cell. In the example shown, the photodetector PS is a photodiode whose anode is connected to the node GND and whose cathode is connected to the node SN via the transistor SW1. Each cell 151 further comprises a pyroelectric conversion element PYR, for example of the type described with reference to FIG. 2, in series with a selection transistor SW2 between the reading node SN of the cell and the node GND. In the example shown, the pyroelectric element PYR has a first electrode connected to the GND node and a second electrode connected to the node SN via the transistor SW2. The gate of the transistor SW1 is connected to a node VGswi for applying a control signal of this transistor, and the gate of the transistor SW2 is connected to a node VGsw2 for applying a control signal of this transistor. The sensor 150 further comprises a light source of illumination (not shown) intended for carrying out an optical acquisition of an image, and a heat source (not shown), distinct from the light source, intended for the implementation of a thermal acquisition of an image. As in the previous examples, the cells 151 may be arranged in a matrix according to rows and columns, the cells of the same line being controlled simultaneously and the cells of distinct lines being controlled successively. In addition, as in the example of Figure 2, the heat source may be controllable to heat cells 151 line by line. In the example of FIG. 5, the transistors SW1 and SW2 make it possible to isolate the photodetector PS and / or the pyroelectric element PYR from the reading node SN. Two images, respectively optical and thermal, can be successively acquired by the sensor. During the acquisition of the optical image, the transistors SW1 are in the on state and the transistors SW2 are non-conducting. During the acquisition of the thermal image, the transistors SW2 are in the on state, and the transistors SW1 are in the off state. For the rest, the sensor can be controlled identically or similarly to that B13696 - DD15734SP 17 which has been described in connection with Figure 3. In this example, the reset transistor RI, and SF and RD transistors of the read floor, are shared by both PS and PYR conversion elements. It will be noted that the example of FIG. 5 can be adapted to produce a charge-read optical and thermal sensor, replacing, in the sensor of FIG. 1, the photodetector PS with the assembly formed, in the example of FIG. FIG. 5, by the transistors SW1 and SW2, the photodetector PS, and the pyroelectric element PYR.
[0006] However, a disadvantage of the sensor 150 lies in the additional cost and the size associated with the presence, in each elementary acquisition cell, of the two selection transistors SW1 and SW2. Figure 6 is an electrical diagram illustrating an example of an optical and thermal TFT fingerprint sensor 160 according to a first embodiment. The sensor 160 of Figure 6 is a voltage reading sensor. This sensor comprises elements that are common with the sensor 150 of FIG. 5. These elements will not be described again. The sensor 160 of FIG. 6 differs from the sensor 150 of FIG. 5 essentially in that, in the sensor 160, elementary acquisition cells 161, both optical and thermal, replace the optical and thermal cells 151 of the sensor 150. The cells 161 of the sensor 160 differ from the cells 151 of the sensor 150 in that they do not include the transistors SW1 and SW2 of the cells 151. More particularly, in each cell 161, the photodetector PS (and more particularly the cathode node of the photodiode PS in the example shown) is connected to the node SN, and the pyroelectric element PYR is connected to the node SN. In other words, the photodetector PS and the pyroelectric element PYR are connected in parallel between the node SN and the node GND. Thus, in this example, the photodetector PS and the pyroelectric element PYR are directly connected to the node SN, and therefore to the transistors RI and SF of the cell.
[0007] The sensor 160 further comprises a lighting light source (not shown) for carrying out an optical acquisition of an image, and a heat source (not shown) intended for the implementation of an optical image acquisition. thermal acquisition of an image. The light source and the heat source are for example controllable, through a control circuit not shown, for, during a fingerprint acquisition phase, to be alternately switched on and off. Thus, during a phase of acquiring a thermal image of the cavity, the light source can be extinguished, and the heat source switched on. As a result, only the pyroelectric element PYR is capable of generating electrical charges representative of the pattern of the print to be acquired. During a phase of acquisition of an optical image of the cavity, the light source can be lit and the heat source extinguished. As a result, only the photodetector PS is capable of generating electrical charges representative of the pattern of the print to be acquired. For the rest, the sensor 160 can be controlled in the same way or similar to that described with reference to FIG. 3. By way of non-limiting example, when acquiring an imprint, the control sequence The following can be implemented: reset of the read node SN by setting the transistor RI on and off; igniting the heat source after opening transistor RI, and keeping the light source off; extinguishing the heat source and reading the potential of the SN node to provide a thermal image of the fingerprint; resetting the read node SN by turning on and off the transistor RI; ignition of the light source after opening transistor RI, and keeping the heat source off; and B13696 - DD15734SP 19 - reading of the potential of the node SN for the purpose of providing an optical image of the fingerprint (after an integration period). It will be noted that the order of acquisition of the optical and thermal images can be reversed. It should further be noted that the reset potential levels applied for optical acquisition and for thermal acquisition are not necessarily the same. In particular, different reset levels can be provided to balance the levels of the output signals, and to optimize the use of an analog-to-digital converter. It should further be noted that the readings of the optical signal and the thermal signal may be readings of the two correlated sampling type (generally referred to in the art as CDS), in which the output value is equal to the difference between a useful signal level and a reset level read on the CL track. Thus, in the aforementioned sequence, as well as in the control sequences described below, a read of the reset level can be performed, via the track CL, after each reset of the read node SN. Alternatively, when acquiring the thermal image, the heat source may be turned on before the end of the reset phase of the read node (i.e., before opening the transistor reset RI), in order to overcome any possible parasitic noise related to current transient effects by the heat source. In addition, during the acquisition of the optical image, the light source can be switched on before the end of the reset phase of the reading node 30, in order to overcome any possible parasitic noise related to transient effects. current draw by the light source. On the other hand, one can take advantage of the fact that, generally, the acquisition of a thermal image point by the pyroelectric element PYR is much faster than the acquisition of an image point. optical by the photodetector PS. By way of illustrative and nonlimiting example, during an acquisition of a thermal image, the reading on the SN node of a potential representative of the imprint pattern is performed 10 to 500 ps after the ignition of the heat source (in particular to overcome any contrast degradation related to the thermalization), and, during an acquisition of an optical image, the integration time of the photodetector is between 10 and 50 ms. As a variant, it is therefore possible to keep the backlight light source on during the thermal acquisition, and to neglect the photogenerated charges produced by the photodetector PS during the thermal acquisition. This simplifies the control of the light source. In addition, the thermal acquisition can be performed during the optical integration period, which reduces the total time required for the acquisition of optical and thermal images. At the end of the optical integration period, the charges generated on the reading node SN by the pyroelectric element PYR can indeed be neglected, insofar as the temperature at the beginning and at the end of the integration period optical is virtually the same. In this case, the thermal acquisition is preferably performed at the beginning of the optical integration period, for example in the first half of the optical integration period, or at least 500 ps before the end of the integration period. optical, to ensure that the charges generated by the pyroelectric element on the node SN during the thermal acquisition have time to cancel by effect thermalization before the end of the optical integration period. By way of nonlimiting example, when acquiring an imprint, the following control sequence can be implemented: - lighting of the backlighting light source (the light source can be lit continuously); resetting of the read node SN by turning on the transistor RI; B13696 - DD15734SP 21 - ignition of the heat source, and setting to the non-conducting state of the transistor RI; - extinction of the heat source (typically 20 to 50 ps after its ignition) and reading of the potential of the node SN for the purpose of providing a thermal image of the cavity (the photogenerated charges by the element PS can be neglected ); continuation of the optical integration without resetting the read node SN (during this time the other cells of the matrix can be read to provide a thermal image); and reading the potential of the SN node, typically 10 to 50 ms after the reinitialization of the cell, with a view to providing an optical image of the imprint (the thermal signal can then be neglected because the temperature of the cell is returned substantially to its original state). An advantage of the sensor 160 of FIG. 6 lies in the small number of transistors per elementary cell 161 with respect to the sensor of FIG. 5.
[0008] Preferably, but not exclusively, the dimensions (surfaces and / or thicknesses) of the photodetector PS and the pyroelectric element PYR, the power of the backlighting light source, the integration time of the photodetector, and the power of the source of heat, are chosen so that the voltage levels generated on the node SN during an optical acquisition and during a thermal acquisition are of the same order of magnitude, or at least remain in both cases in a range of acceptable voltage levels for the output stage. By way of nonlimiting example, the above parameters are chosen so that, for the same type of structuring of the skin (crest or hollow) above an elementary cell, the level of voltage generated on the node SN during an optical acquisition is between 0.5 and 2 times the voltage level generated on the SN node during a thermal acquisition.
[0009] Figure 7 is an electrical schematic illustrating another example of an optical and thermal TFT fingerprint sensor 170 according to the first embodiment. The sensor 170 of FIG. 7 is a load-reading sensor. This sensor comprises elements that are common with the sensors 100 and 120 of FIGS. 1 and 2. These elements will not be described again. The sensor 170 of FIG. 7 differs from the sensors 100 and 120 of FIGS. 1 and 2 essentially in that, in the sensor 170, elementary acquisition cells 171, both optical and thermal, replace the optical cells 101 or thermal cells. 121 of the sensors 100 and 120. The cells 171 of the sensor 170 differ from the cells 101 or 121 of the sensors 100 and 120 in that they comprise a photodetector PS and a pyroelectric element PYR connected in parallel between the nodes SN and GND of the cell. .
[0010] Thus, in this example, the RS read transistor of the cell is directly connected to both the photodetector PS and the pyroelectric element PYR. The transistor RS is shared by the photodetector PS and the pyroelectric element PYR. The sensor 170 further comprises, as in the example of Figure 6, a lighting light source (not shown) for carrying out an optical acquisition of an image, and a heat source (not shown) for carrying out a thermal acquisition of an image. The light source and the heat source are for example controllable via a control circuit not shown, in a manner identical or similar to that described in connection with Figure 6. The operation of the sensor 170 is identical or similar to what has been described in connection with Figure 6, except that in the sensor 170, the elementary acquisition cells are load-reading cells. In particular, the cell resets are performed through their RS read transistors. In a manner similar to that described in example 35 of FIG. 6, the dimensions (areas and / or thicknesses) of the photodetector PS and the pyroelectric element PYR, the power of the light source of FIG. backlighting, the integration time of the photodetector, and the power of the heat source, are preferably chosen so that the charge quantities generated on the SN node during an optical acquisition and during a thermal acquisition are same order of magnitude. FIG. 8 is an electrical diagram illustrating another example of an optical and thermal TFT fingerprint sensor 180 according to the first embodiment, this sensor further comprising capacitive type acquisition means. The sensor 180 of Figure 8 is a voltage reading sensor. This sensor comprises elements that are common with the sensor 160 of FIG. 6. These elements will not be described again. The sensor 180 of FIG. 8 differs from the sensor 160 of FIG. 6 essentially in that, in the sensor 180, elementary acquisition cells 181 replace the cells 161 of the sensor 160. The sensor cells 181 differ from the cells 161 of the sensor 161. sensor 180 in that they comprise capacitive type acquisition acquisition means, for example of the type described with reference to FIG. 4. More particularly, in the example shown, each cell 181 comprises a selection transistor SW connecting the reading node SN of the cell to the photodetector PS and to the pyroelectric element PYR. More particularly, in each cell 181, the photodetector PS and the pyroelectric element PYR are connected in parallel between the node GND and an intermediate node ni, and the selection transistor SW is connected between the node n1 and the node SN. In the example shown, the photodetector PS is a photodiode whose anode is connected to the GND node and whose cathode is connected to the node n1. The gate of the selection transistor SW is connected to a node VGsw for applying a control signal of this transistor. In addition, in the example shown, each cell 181 comprises a reference capacitor CREF connected between the reading node SN of the cell and a CMD for applying a control signal, and a conducting electrode EL connected to the node The EL electrode is coated with a dielectric layer and is intended to form a capacitance with the skin of a finger of the user. Alternatively, the transistor RI may be connected between the nodes VRT and ni.
[0011] In the example of FIG. 8, the transistor SW makes it possible to isolate the capacitive acquisition stage from the optical and pyroelectric acquisition stage. This makes it possible in particular, during the implementation of a capacitive acquisition, that the capacitances of the photodetector PS and the pyroelectric element PYR do not contribute to increasing the capacity of the reading node SN, which would make it difficult to acquire a capacitive type imprint signal on the SN node. In the example of FIG. 8, three images of the same imprint, respectively optical, thermal and capacitive, can be acquired by the sensor. The reset transistor R1, and the SF and RD transistors of the read stage, are shared by the three capacitive, photoelectric, and pyroelectric conversion elements. When acquiring the capacitive image, the transistors SW of the cells 181 can be set to the off state, and the cells can be controlled in a manner similar to or identical to that described with reference to FIG. When acquiring the thermal and optical images, the transistors SW of the cells 181 can be turned on, and the cells can be controlled in a manner similar to or identical to that described with reference to FIG. It should be noted that the capacity of the elements PYR and PS is generally relatively large compared to the capacity of the node SN (and in particular the capacity CREF) - Thus, the thermal and optical signals are not altered significantly by the capacity of the node SN when the transistor SW is in the on state. Alternatively, the integration of the light by the photodetector PS can be performed in part or in full during the capacitive reading, which reduces the total time of acquisition of the imprint. As has been described in connection with FIG. B13696 - DD15734SP 6, it is also possible to maintain the backlighting source during the entire acquisition time of the cavity, if it is assumed that the reading time of the thermal information is negligible in view of the integration time of the photodetector.
[0012] By way of nonlimiting example, during the acquisition of a fingerprint, the following control sequence can be implemented: reset of the read node SN by the on-state of the transistor RI, and reset of the node n1 by turning on the transistor SW; opening of the selection transistor SW to isolate the optical and thermal acquisition stage from the rest of the cell (the opening of the transistor SW marks the beginning of the period of integration of the light by the photodetector PS); opening the reset transistor RI to isolate the read node SN from the VRT node, and reading the reference value for the capacitive reading; capacitive fingerprint reading; ignition of the heat source before the end of the capacitive reading; at the end of the capacitive reading, optional reset of the read node SN by closing then reopening of the transistor RI; closing the selection transistor SW and reading the reference value for the thermal and optical readings; extinction of the heat source and reading of the potential of the node SN for the purpose of providing a thermal image of the cavity (the optical signal can be neglected because the duration of the capacitive and thermal acquisitions are relatively short compared to the time of integration of optical acquisition); continuation of the optical integration without resetting the read node SN (during this time the other cells of the matrix can be read); and B13696 - DD15734SP 26 reading of the potential of the node SN at the end of the integration period of the photodetector, in order to provide an optical image (the thermal signal can then be neglected because the temperature of the cell has returned substantially to its initial state). Figure 9 is an electrical diagram illustrating an example of an optical and thermal TFT fingerprint sensor 190 according to a second embodiment. The sensor 190 of Figure 9 is a load-reading sensor. This sensor comprises elements that are common with the sensor 170 of FIG. 7. These elements will not be described again. The sensor 190 of FIG. 9 differs from the sensor 170 of FIG. 7 essentially in that, in the sensor 190, elementary acquisition cells 191 replace the cells 171 of the sensor 170. The cells 191 of the sensor 190 differ from the cells 171 of the sensor 170 in that, in the cells 191, the photodetector PS is not connected directly between the nodes GND and SN, but is connected between the node GND and an intermediate node n2, the node n2 being connected to the node SN by a selection transistor SW. The pyroelectric element PYR is connected directly to the node SN. More particularly, in this example, the photodetector PS is a photodiode whose anode is connected to the GND node and whose cathode is connected to the node n2. Thus, the selection transistor SW is connected to both the photodetector PS and the pyroelectric element PYR. The read transistor RS of the cell is shared by the photodetector PS and the pyroelectric element PYR. In the sensor 190, the transistors SW make it possible, in each elementary acquisition cell, to isolate the photodetector PS from the rest of the cell. One advantage is that this provides additional control capabilities over the sensor 170 of FIG. 7, while limiting the cost and bulk relative to a sensor with two selection transistors SW1 and SW2 per cell, as described. In addition, this gives more flexibility in the sizing of PS and thermal conversion elements PYR than in a sensor of the type described in connection with FIG. non-limiting example, during the acquisition of a fingerprint, the following control sequence can be implemented: reset of the read node SN and the intermediate node n2 by turning on the RS and SW transistors ; Opening the selection transistor SW to isolate the photodetector from the node SN, and opening the transistor RS to isolate the node SN from the output track CL; ignition of the heat source and the light source (note that the light source may in practice remain permanently on, the PS photodetector being isolated from the pyroelectric element); extinguishing the heat source and reading the potential of the SN node to provide a thermal image of the fingerprint; Continuation of the optical integration (during this time the other cells of the matrix can be read to provide the thermal image); and closing the transistor SW and reading the potential of the SN node at the end of the integration period of the photodetector, for the purpose of providing an optical image. FIG. 10 is an electrical diagram illustrating another example of an optical and thermal TFT fingerprint sensor 200 according to the second embodiment. The sensor 200 of FIG. 10 is a voltage reading sensor. This sensor comprises elements common to the sensor 160 of FIG. 6. These elements will not be described again. The sensor 200 of FIG. 10 differs from the sensor 160 of FIG. 6 essentially in that, in the sensor 200, elementary acquisition cells 201 replace the cells 161 of the sensor 160. The cells 201 of the sensor 200 differ from the cells 161 in the cells 201, the photodetector PS is not connected directly between the nodes GND and SN, but is connected between the node GND and an intermediate node n3, the node n3 being connected to the node SN by a selection transistor SW.
[0013] The pyroelectric element PYR is connected directly to the node SN. More particularly, in this example, the photodetector PS is a photodiode whose anode is connected to the GND node and whose cathode is connected to the node n3. Thus, the selection transistor SW is connected to both the photodetector PS and the pyroelectric element PYR. The transistors RI, SF and RD of the cell are shared by the photodetector PS and the pyroelectric element PYR. In the sensor 200, the transistors SW make it possible, in each elementary acquisition cell, to isolate the photodetector PS from the rest of the cell, which offers additional control possibilities with respect to the sensor 160 of FIG. the cost and bulk compared to a sensor with two selection transistors SW1 and SW2 per cell, of the type described in connection with FIG. 5. In addition, this gives more flexibility as to the dimensioning of the optical conversion elements PS and PYR thermal, that in a sensor of the type described in relation to Figure 6. As a non-limiting example, when acquiring an imprint, the following control sequence can be implemented: - ignition of the light source of illumination (in this example, the light source can remain lit continuously); resetting the read node SN by turning on the transistor RI and then opening the transistor RI; 30 - closing of the transistor SW - the photogenerated charges by the photodetector PS since its previous reset are then distributed over the entire capacity of the read node SN; B13696 - DD15734SP 29 the potential of the SN node at the end of the integration period of the photodetector, for the purpose of providing an optical image. reset nodes n3 and SN by turning on the transistors RI and SW; opening of the transistor SW, to isolate the photodetector PS of the node SN (which defines the beginning of a new integration period of the photodetector PS); opening of the reset transistor RI. ignition of the heat source; extinguishing the heat source and reading the potential of the SN node to provide a thermal image of the fingerprint. Alternatively, in the examples of FIGS. 9 and 10, the PS photodetector and the PYR pyroelectric element may be interchanged, i.e., the PYR element may be placed behind the selection transistor SW, between the node n2 or n3 and the node GND, the photodetector PS then being directly connected to the node SN. This choice can be made according to the respective values of the capacities of the PYR and PS elements. Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art. In particular, it will be noted that, in an optical impression sensor, the photodetector can generate, in addition to the useful signal representative of the pattern of the print to be acquired, noise associated in particular with the currents of darkness and / or light. room. In order to overcome these sources of noise, it is possible, in the aforementioned embodiments, to carry out an empty reading, that is to say without a finger on the sensor and without turning on the backlighting source. the light source, so as to acquire an image representative of the noise generated by the photodetector PS (particularly related to dark currents and parasitic ambient light). Once this image is acquired, it can be subtracted from the final optical image, B13696 - DD15734SP 30 and, if the photodetector is not isolated from the pyroelectric element, to the final thermal image. Moreover, instead of performing two separate readings, thermal and optical, respectively, seeking to distinguish the thermal signal from the optical signal, as described above, it is possible to read the sum of the photogenerated charges and charges generated by the pyroelectric element, without seeking to separate them, in order to acquire an image combining the optical signal and the thermal signal, which can prove useful for acquiring certain difficult footprints. By way of example, in the embodiments of FIGS. 6, 7 and 8, provision can be made to first light the light source and then, towards the end of the optical integration period, to switch on the source. of heat so that the pyroelectric element generates charges on the node SN, then read on the node SN a value representative of the sum of the optical signal and the thermal signal. In addition, although above described examples of control method in which, during the acquisition of a print, an optical image and a thermal image are read, may be provided for embodiments in which reads several optical images and / or several thermal images of the same footprint. For example, if the optical integration period is several times greater than the time required to implement the steps of thermal reading of all lines of the sensor, it can be expected to scan successively several times all sensor to acquire several thermal images, then, at the last scan of the sensor, to acquire the optical image.
[0014] Moreover, in the embodiments of FIGS. 9 and 10, the selection transistor SW between the photodetector PS and the pyroelectric element PYR can advantageously be used to implement a "global shutter" type reading sequence (or read overall shutter), that is to say in which, during an acquisition of an optical image, all the PS photodetectors of the sensor are integrated simultaneously. In each elementary acquisition cell, the pyroelectric element PYR can then serve as a storage element for storing the value acquired by the photodetector, while awaiting its reading. This embodiment advantageously makes it possible to use a weak integration time in front of the reading time of the whole of the matrix, the light source being flashed synchronously with the acquisition. By way of nonlimiting example, during an acquisition of a fingerprint, the following control sequence may be implemented: putting the transistors SW of all the cells of the sensor in the on state; reset all the cells of the sensor, then set to the non-passing state of the transistors SW; ignition of the light source during the period of optical integration of the sensor; at the end of the integration period, closing of the selection transistors SW in all the cells of the sensor (photogenerated charges during the integration are then transferred to the node SN, in the capacitance formed by the pyroelectric element) then opening the selection transistors SW (the voltage across the photodiode can then continue to evolve independently of the node SN); reading, for example line by line, in all the cells of the sensor, the signal level stored on the node SN for the purpose of providing the optical image; in each cell, after reading the optical signal, resetting the SN node by closing the transistor RI and leaving the transistor SW open; ignition of the heat source; extinguishing the heat source and reading the signal on the node SN for the purpose of providing a thermal image. Moreover, the embodiments described above can be combined with other fingerprint acquisition technologies, for example ultrasonic or electric field acquisition technologies, or technologies in which an RF signal is applied through the skin of the user.
[0015] In addition, those skilled in the art will be able to adapt the embodiments described to make sensors using acquisitions of passive thermal images, that is to say sensors without active heat source. In this case, the temperature variation exploited by the PYR pyroelectric conversion elements is a variation that occurs when the user places his finger on the sensor, and / or removes it from the sensor. Such sensors can be of static type (the surface of the sensor is at least equal to the surface of the impression to be acquired, and the finger does not move relative to the sensor during the acquisition) or of scanning type (the surface the sensor is smaller than the area of the impression to be acquired, and the finger scrolls past the sensor during acquisition).

权利要求:
Claims (11)
[0001]
REVENDICATIONS1. A fingerprint sensor (160; 170; 180; 190; 200) having, on a transparent support substrate, a plurality of elementary acquisition cells (161; 171; 181; 191; 201), each cell having a photodetector ( PS), a pyroelectric conversion element (PYR), and at least one TFT transistor (RI, SF; RS; SW) connected to both the photodetector (PS) and the pyroelectric conversion element (PYR).
[0002]
The sensor (160; 170; 180; 190; 200) according to claim 1, further comprising a light source of illumination and a heat source distinct from the light source.
[0003]
The sensor (160; 170; 180) according to claim 2, wherein the photodetector (PS) and the pyroelectric conversion element (PYR) are connected in parallel. 15
[0004]
4. A sensor (160; 170; 180) according to claim 2 or 3, comprising a circuit adapted to control the acquisition of a thermal image and the acquisition of an optical image by the cells (161; 171; 181). of the sensor, this circuit being adapted, during the entire acquisition phase of the optical image, to turn on the light source and keep the heat source off, and, throughout the acquisition phase of the thermal image, to keep the light source off.
[0005]
5. A sensor (160; 170; 180) according to claim 2 or 3, comprising a circuit adapted to control the acquisition of a thermal image and the acquisition of an optical image by the cells (161; 171; 181 ) of the sensor, this circuit being adapted to implement the acquisition of the thermal image during part of an integration period of the acquisition phase of the optical image during which the light source is turned on. 30
[0006]
The sensor (160; 170) according to any one of claims 2 to 5, wherein in each cell (161; 171) the photodetector (PS) and the pyroelectric converting element (PYR) are connected to a Capacitive reading node (SN) of the cell.B13696 - DD15734SP 34
[0007]
The sensor (180) according to any one of claims 2 to 5, wherein in each cell (181), the photodetector (PS) and the pyroelectric conversion element (PYR) are connected to an intermediate node (n1 ) of the cell, the intermediate node being connected to a capacitive read node (SN) of the cell by a selection transistor (SW), and each cell (181) further comprising: a reference capacitor (CREF) connected between the capacitive read node (SN) and a node (CMD) for applying a control signal; and an electrode (EL) connected to the capacitive readout node (SN), the EL electrode being coated with a dielectric layer and being adapted to form a capacitance with the skin of a user for capacitive acquisition of a print image.
[0008]
8. Sensor (190; 200) according to claim 2, wherein the photodetector (PS) and the pyroelectric conversion element (PYR) are connected to a same selection transistor (SW) allowing, in the open state, isolate the photodetector (PS) from the pyroelectric element (PYR).
[0009]
The sensor (160; 170; 180; 190; 200) according to any one of claims 2 to 8, wherein the cells (161; 171; 181; 191; 201) are arrayed in rows and columns. and wherein the heat source is controllable to heat the cells (161; 171; 181; 191; 201) line by line.
[0010]
The sensor (160; 180; 200) according to any one of claims 1 to 9, wherein the cells (161; 181; 201) are voltage read cells, each cell comprising: a capacitive read node. (SN) to which the photodetector (PS) and the pyroelectric conversion element (PYR) are connected, a reset transistor (RI) connecting the read capacitive node (SN) to a node (VET) of application of a reset potential; and a read circuit comprising a transistor (SF) mounted as a source follower, whose gate is connected to the read node (SN), and whose source is connected to an output track (CL) of the cell via of a read transistor (RD).
[0011]
The sensor (170; 190) according to any one of claims 1 to 9, wherein the cells (171; 191) are load-reading cells, each cell comprising: a capacitive read-out node (SN) to which connected the photodetector (PS) and the pyroelectric conversion element (PYR); and a read transistor (RS) connecting the read node (SN) to an output track (CL) of the cell.

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EP3201832B1|2018-10-10|

US20170293791A1|2017-10-12|

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US11176345B2|2019-07-17|2021-11-16|Invensense, Inc.|Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness|

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US11232549B2|2019-08-23|2022-01-25|Invensense, Inc.|Adapting a quality threshold for a fingerprint image|

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法律状态:
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2016-04-08| PLSC| Publication of the preliminary search report|Effective date: 20160408 |

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优先权:

申请号 | 申请日 | 专利标题

FR1459494|2014-10-03|

FR1459494A|FR3026877B1|2014-10-03|2014-10-03|SENSOR OF DIGITAL OR PALMAIRE IMPRESSIONS|FR1459494A| FR3026877B1|2014-10-03|2014-10-03|SENSOR OF DIGITAL OR PALMAIRE IMPRESSIONS|

JP2017518055A| JP6741657B2|2014-10-03|2015-09-30|Fingerprint or palm print sensor|

EP15788117.8A| EP3201832B1|2014-10-03|2015-09-30|Fingerprint or palmprint sensor|

CN201580065747.8A| CN107004125B|2014-10-03|2015-09-30|Fingerprint or palm print sensor|

US15/516,402| US10176357B2|2014-10-03|2015-09-30|Fingerprint or palmprint sensor|

KR1020177011066A| KR20170104439A|2014-10-03|2015-09-30|Fingerprint and Palmprint Sensor|

PCT/FR2015/052616| WO2016051087A1|2014-10-03|2015-09-30|Fingerprint or palmprint sensor|

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